Simulation optimization of single-shot continuously time-resolved MeV ultra-fast electron diffraction

被引:1
作者
Li, Renkai [1 ]
Huang, Wenhui [1 ]
Du, Yingchao [1 ]
Shi, Jiaru [1 ]
Tang, Chuanxiang [1 ]
机构
[1] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
MeV ultra-fast electron diffraction; Continuously time-resolved; Photocathode RF gun; RF streaking cavity; TEMPORAL RESOLUTION; GUN;
D O I
10.1016/j.nima.2010.02.012
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In a so-called single-shot continuously time-resolved mega-electron-volt ultra-fast electron diffraction (CUR MeV UED) system, a radio-frequency streaking cavity maps the temporally distributed diffraction features into a transverse pattern, from which structural changes within the duration of the electron pulse can be resolved continuously. Due to the high charge density of the MeV beam, such a pattern can be achieved with a single electron pulse. In this paper, we present the proposed configuration and the simulation optimization of such a system. A thin slit is used as the key element to minimize overlaps of the diffraction features when they are streaked. Using polycrystalline aluminum as the sample, we obtain a streaked pattern in which features of different lattice planes are clearly resolved. It is demonstrated that such a system can take an 'atomic movie' with a duration of a few picoseconds, and continuously distributed similar to 100-femtosecond frames, by using a single electron pulse. (C) 2010 Elsevier By. All rights reserved.
引用
收藏
页码:S15 / S19
页数:5
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