Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

被引：18

作者：

Lin, Yu-Ru ^{[1
]}

Yang, Yi-Yun ^{[1
]}

Lin, Yu-Hsien ^{[2
]}

Kurniawan, Erry Dwi ^{[1
,3
,4
]}

Yeh, Mu-Shin ^{[5
]}

Chen, Lun-Chun ^{[1
,6
]}

Wu, Yung-Chun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

[2] Natl United Univ, Dept Elect Engn, Miaoli 36003, Taiwan

[3] Acad Sinica, Taiwan Int Grad Program, Nano Sci & Technol Program, Hsinchu 300, Taiwan

[4] Natl Tsing Hua Univ, Hsinchu 300, Taiwan

[5] Natl Appl Res Labs, Natl Nano Device Labs, Hsinchu 300, Taiwan

[6] eMemory Technol Inc, Business Grp 1, Prod Div 2, Hsinchu 30265, Taiwan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

关键词：

Thin-film transistor (TFT); gate-all-around (GAA); Nanosheet (NS); stacked structure;

D O I：

10.1109/JEDS.2018.2873008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thin-film transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS- EFT) structures. The stacked nanosheets device structure, fabrication, and electrical characteristics are analyzed. The SNS-GAATFT reveals better performance to multi-gate SNS-TFT. The proposed inversion mode SNS-TFT has properties of the easy process with low cost and compatible with all 3-D Si CMOS and AMOLED applications. Moreover, the SNS-GAAEFT is suitable for future monolithic 3-D IC for 2015's ITRS technology roadmap for the year 2024-2030.

引用

页码：1187 / 1191

页数：5

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