Direct band Ge and Ge/InGaAs quantum wells in GaAs

被引：10
作者：
Aleshkin, V. Ya [1 ]
Dubinov, A. A. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期
关键词：
MOLECULAR-BEAM EPITAXY; DOMAIN-FREE GROWTH; SI;
D O I：
10.1063/1.3594753
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The possibility of the creation of direct band Ge and Ge/InGaAs quantum wells in GaAs is shown for small Ge quantum well thickness. Such quantum wells can emit efficiently the radiation in the 1.3-1.5 mu m wavelength range and can be used in laser diodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3594753]
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页数：5
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