Direct band Ge and Ge/InGaAs quantum wells in GaAs

被引：10

作者：

Aleshkin, V. Ya ^{[1
]}

Dubinov, A. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

关键词：

MOLECULAR-BEAM EPITAXY; DOMAIN-FREE GROWTH; SI;

D O I：

10.1063/1.3594753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of the creation of direct band Ge and Ge/InGaAs quantum wells in GaAs is shown for small Ge quantum well thickness. Such quantum wells can emit efficiently the radiation in the 1.3-1.5 mu m wavelength range and can be used in laser diodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3594753]

引用

页数：5

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