Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

被引：97

作者：

Dauber, Jan ^{[1
,2
,3
]}

Sagade, Abhay A. ^{[4
]}

Oellers, Martin ^{[1
,2
]}

Watanabe, Kenji ^{[5
]}

Taniguchi, Takashi ^{[5
]}

Neumaier, Daniel ^{[4
]}

Stampfer, Christoph ^{[1
,2
,3
]}

机构：

[1] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany

[2] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 8 9, D-52425 Julich, Germany

[4] AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany

[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 19期

关键词：

DEVICES;

D O I：

10.1063/1.4919897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current-and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/root Hz making our graphene sensors highly interesting for industrial applications. (C) 2015 AIP Publishing LLC.

引用

页数：4

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