Interdiffused quantum wells for lateral carrier confinement in VCSEL's

被引：20

作者：

Naone, RL ^{[1
]}

Floyd, PD

Young, DB

Hegblom, ER

Strand, TA

Coldren, LA

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Xerox PARC, Palo Alto, CA 94302 USA

[3] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 04期

关键词：

quantum-well intermixing; semiconductor device fabrication; surface emitting lasers;

D O I：

10.1109/2944.720483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that it is necessary to eliminate carrier diffusion in the active region for viable vertical-cavity lasers (VCL's) with small dimensions, However, methods that work well in reducing lateral carrier leakage in narrow ridge-waveguide lasers such as silicon induced disordering may be problematic in VCL structures. Encouraging results from novel methods for impurity free intermixing for VCL applications are presented.

引用

页码：706 / 714

页数：9

共 44 条

[1] DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J].

ARNOLD, N ;

SCHMITT, R ;

HEIME, K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) :443-+

[2] INDIUM DIFFUSION IN THE CHEMICAL-POTENTIAL GRADIENT AT AN IN0.53GA0.47AS/IN0.52AL0.48AS INTERFACE [J].

BAIRD, RJ ;

POTTER, TJ ;

KOTHIYAL, GP ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1988, 52 (24) :2055-2057

[3]

BEAUVAIS J, 1992, ELECTRON LETT, V28, P670

[4] SI DIFFUSION AND INTERMIXING IN ALGAAS/GAAS STRUCTURES USING BURIED IMPURITY SOURCES [J].

BEERNINK, KJ ;

THORNTON, RL ;

ANDERSON, GB ;

EMANUEL, MA .

APPLIED PHYSICS LETTERS, 1995, 66 (19) :2522-2524

[5] THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES [J].

BRADLEY, IV ;

GILLIN, WP ;

HOMEWOOD, KP ;

WEBB, RP .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1686-1692

[6] Advances in selective wet oxidation of AlGaAs alloys [J].

Choquette, KD ;

Geib, KM ;

Ashby, CIH ;

Twesten, RD ;

Blum, O ;

Hou, HQ ;

Follstaedt, DM ;

Hammons, BE ;

Mathes, D ;

Hull, R .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :916-926

[7] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].

CHOQUETTE, KD ;

SCHNEIDER, RP ;

LEAR, KL ;

GEIB, KM .

ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044

[8]

Coldren LA, 1996, APPL PHYS LETT, V68, P313, DOI 10.1063/1.116070

[9]

COLDREN LA, 1996, P SPIE PHOTONICS W 9, P3

[10] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

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