Impact of ultra low k dielectrics on RF-performance of inductors

被引：0

作者：

Körner, H ^{[1
]}

Büyüktas, K ^{[1
]}

Eisener, B ^{[1
]}

Liebmann, R ^{[1
]}

Schulz, SE ^{[1
]}

Seidel, U ^{[1
]}

Simbürger, W ^{[1
]}

Gessner, T ^{[1
]}

机构：

[1] Infineon Technol AG, D-81739 Munich, Germany

来源：

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low k and ultra low k dielectrics will be integrated in the lower metal levels of sub-100nm technology nodes in order to reduce RC delay. Several product applications require on chip inductors of high quality, which are typically integrated in the top levels of such multilevel metal schemes. This paper provides experimental and simulation results for the impact of SiO2 substitution by low-k dielectrics on the quality factor Q and the resonant frequency f(res) of inductors ranging from 1 to 20 nH. Substitution of SiO2 by low k in one or more levels has a beneficial impact on Q and f(res), which depends upon the k value, dielectric thickness, low k location, but also upon the inductor design and inductivity. In good agreement of experimental and simulation results, maximum improvements of 25% for f(res) and 16% for Q are found for the investigated inductor designs, if complete substitution of SiO2 by k = 2.2 dielectric in the lower levels is assumed.

引用

页码：143 / 149

页数：7

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