Oxalic acid as a complexing agent in CMP slurries for copper

被引：47

作者：

Gorantla, VRK

Babel, A

Pandija, S

Babua, SV ^{[1
]}

机构：

[1] Clarkson Univ, Dept Chem Engn, Potsdam, NY 13699 USA

[2] Clarkson Univ, Ctr Adv Mat Proc, Potsdam, NY 13699 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 05期

关键词：

D O I：

10.1149/1.1883873

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Oxalic acid was investigated as a complexing agent in H2O2-based slurries for chemical mechanical planarization (CMP) of Cu. At pH similar to 1.5, oxalic acid acts as an inhibiting agent by forming an easily abraded soft bluish film on the copper surface. The high removal rate and low dissolution rates make it a desirable complexing agent, except for the strongly acidic pH condition. In the pH range 2.0-6.0, oxalic acid etches copper with the maximum dissolution rate occurring at pH similar to 3.0. Cu removal rates and some electrochemical measurements that shed more light on these results are presented. (C) 2005 The Electrochemical Society.

引用

页码：G131 / G134

页数：4

共 24 条

[1] Chemical roles of peroxide-based alkaline slurries in chemical-mechanical polishing of Ta: investigation of surface reactions using time-resolved impedance spectroscopy [J].