A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology

被引:5
|
作者
Gong, Yunyi [1 ]
Lee, Seokchul [1 ]
Ying, Hanbin [1 ]
Omprakash, Anup P. [1 ]
Gebara, Edward [2 ]
Gu, Huifang [3 ]
Nicholls, Charles [3 ]
Cressler, John D. [1 ]
机构
[1] Georgia Tech, Sch ECE, 777 Atlantic Dr NW, Atlanta, GA 30332 USA
[2] 12R Nanowave Inc, 85 5th St NW, Atlanta, GA 30308 USA
[3] NANOWAVE Technol Inc, 433 Horner Ave, Etobicoke, ON M8W 4W3, Canada
来源
2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019) | 2019年
关键词
broadband; SiGe BiCMOS; logarithmic amplifier; power detector;
D O I
10.1109/bcicts45179.2019.8972724
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents the design of a broadband logarithmic (log) power detector implemented using 130 nm SiGe BiCMOS technology. The proposed log detector uses a pair of common-emitter SiGe HBTs for sensing, and a log amplifier stage is employed to achieve linear-in-dB transfer characteristic. The log detector shows 23 dB dynamic range with -28 dBm minimum input power from 2 GHz to 40 GHz with +/- 1.5 dB log error. The design consumes 3.2 mW of static DC power with a 2-V supply and consumes less than 7.8 mW of DC power over the input power range. A two-branch log detector design consisting of two identical parallel log detectors with modified output stage is also presented. The two-branch log detector demonstrates 47 dB dynamic range with minimum input power of -53 dBm at 10 GHz with +/- 1.5 dB log error, with an externally introduced 25 dB power level offset between the inputs of the two branches.
引用
收藏
页数:4
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