Properties of dopants in ZnGePe2 CdGeAs2, AgGaS2 and AgGaSe2

被引：29
作者：
Bairamov, BH
Rud, VY
Rud, YV
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] State Tech Univ, St Petersburg 195251, Russia
来源：
MRS BULLETIN | 1998年 / 23卷 / 07期
关键词：
D O I：
10.1557/S0883769400029080
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：41 / 44
页数：4
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