WIRELESS MAGNETOSTRICTIVE TYPE INDUCTIVE SENSING CMOS-MEMS PRESSURE SENSORS

被引：0

作者：

Chang, H. -C. ^{[1
]}

Liao, S. -C. ^{[2
]}

Cheng, C. -L. ^{[1
]}

Wen, J. -H. ^{[3
]}

Hsieh, H. -S. ^{[1
]}

Lai, C. -H. ^{[2
]}

Fang, W. ^{[1
,3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[3] Natl Tsing Hua Univ, NEMS Inst, Hsinchu, Taiwan

来源：

2016 IEEE 29TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study demonstrates the wireless magnetostrictive type inductive sensing CMOS-MEMS pressure sensors using the TSMC 0.18 mu m 1P6M process. Features of this study are: (I) High sensitivity pressure sensors are realized based on the inverse-magnetostrictive sensing principle; (2) metal and dielectric layers of CMOS process are employed to form the magnetic coil and sensing diaphragm respectively; (3) additional magnetostrictive CoFeB film was deposited and patterned by the shadow sputtering; (4) wireless sensing is available by the external reading coil. Experiments show sensors with gauge-factor ranging 480 similar to 1100 are achieved, and wireless sensing capability is also demonstrated.

引用

页码：218 / 221

页数：4

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