Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

被引：7

作者：

Kocher, C. C. ^{[1
]}

Puchtler, T. J. ^{[1
]}

Jarman, J. C. ^{[2
]}

Zhu, T. ^{[2
]}

Wang, T. ^{[1
]}

Nuttall, L. ^{[1
]}

Oliver, R. A. ^{[2
]}

Taylor, R. A. ^{[1
]}

机构：

[1] Univ Oxford, Dept Phys, Pk Rd, Oxford OX1 3PU, England

[2] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

TEMPERATURE-DEPENDENCE; ROOM-TEMPERATURE; BAND-GAP; NANOWIRES; INN;

D O I：

10.1063/1.5008720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates considerably. One solution is to grow quantum dots on a non-polar plane; this gives the additional advantage of strongly polarized emission along one crystal direction. This is highly desirable for future device applications, as is electrical excitation. Here, we report on electroluminescence from non-polar InGaN quantum dots. The emission from one of these quantum dots is studied in detail and found to be highly polarized with a degree of polarization of 0.94. Single-photon emission is achieved under excitation with a constant current giving a g((2))(0) correlation value of 0.18. The quantum dot electroluminescence persists up to temperatures as high as 130 K. Published by AIP Publishing.

引用

页数：4

共 31 条

[1] Quantum Dot-Like Behavior of Compositional Fluctuations in AIGaN Nanowires [J].

Belloeil, M. ;

Gayral, B. ;

Daudin, B. .

NANO LETTERS, 2016, 16 (02) :960-966

[2]

Bennett C.H., 1984, PROC IEEE INT C COMP, P175, DOI DOI 10.1016/J.TCS.2014.05.025

[3]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO

[4]

2-O

[5] Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot [J].

Deshpande, Saniya ;

Frost, Thomas ;

Hazari, Arnab ;

Bhattacharya, Pallab .

APPLIED PHYSICS LETTERS, 2014, 105 (14)

[6] An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150K [J].

Deshpande, Saniya ;

Bhattacharya, Pallab .

APPLIED PHYSICS LETTERS, 2013, 103 (24)

[7] Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire [J].

Deshpande, Saniya ;

Heo, Junseok ;

Das, Ayan ;

Bhattacharya, Pallab .

NATURE COMMUNICATIONS, 2013, 4

[8] Single-photon detectors for optical quantum information applications [J].

Hadfield, Robert H. .

NATURE PHOTONICS, 2009, 3 (12) :696-705

[9] Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots [J].

Holmes, M. ;

Kako, S. ;

Choi, K. ;

Arita, M. ;

Arakawa, Y. .

PHYSICAL REVIEW B, 2015, 92 (11)

[10] Single Photons from a Hot Solid-State Emitter at 350 K [J].

Holmes, Mark J. ;

Kako, Satoshi ;

Choi, Kihyun ;

Arita, Munetaka ;

Arakawa, Yasuhiko .

ACS PHOTONICS, 2016, 3 (04) :543-546

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