Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells

被引：15

作者：

Ok, Young-Woo ^{[1
]}

Rohatgi, Ajeet ^{[1
]}

Kil, Yeon-Ho ^{[2
]}

Park, Sung-Eun ^{[3
]}

Kim, Dong-Hwan ^{[3
]}

Lee, Joon-Sung ^{[4
]}

Choi, Chel-Jong ^{[2
,5
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[4] Hyundai Heavy Ind Co Ltd, Elect Elect Syst Div, Yongin 446716, South Korea

[5] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

Junction; selective chemical etching; Si interstitial; solar cells; transmission electron microscopy (TEM); PHOSPHORUS DIFFUSION; MICROSCOPY; MECHANISM; CONTACTS;

D O I：

10.1109/LED.2010.2098840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated 2-D dopant distribution in a POCl3-diffused n(+) emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n(+) emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

引用

页码：351 / 353

页数：3

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