Effects of hydrogen annealing temperature on the structural and physical properties of In1.925Cr0.05Cu0.025O3 thin films

被引：7

作者：

Baqiah, H. ^{[1
]}

Ibrahim, N. B. ^{[2
]}

Shaari, A. H. ^{[3
]}

Al-Hada, Naif Mohammed ^{[1
]}

Talib, Z. A. ^{[4
]}

机构：

[1] Dezhou Univ, Shandong Key Lab Biophys, Inst Biophys, 566 Univ Rd, Dezhou, Shandong, Peoples R China

[2] Univ Kebangsaan Malaysia, Sch Appl Phys, Fac Sci & Technol, Ukm Bangi 43600, Selangor, Malaysia

[3] Univ Putra Malaysia, Dept Phys, Fac Sci, Upm Serdang 43400, Selangor, Malaysia

[4] Jeonbuk Natl Univ, Dept Phys, Coll Nat Sci, 567 Baekje Daero, Jeonju Si 54896, Jeollabuk Do, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2021年 / 621卷

关键词：

Hydrogen annealing; Cu doped In1.95Cr0.05O3; Semiconducting behavior; Urbach energy; Oxygen defects; Magnetic behavior; DOPED IN2O3; OPTICAL-PROPERTIES; MAGNETIC-PROPERTIES; FERROMAGNETISM; ZNO; ITO;

D O I：

10.1016/j.physb.2021.413290

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structural, optical, electrical and magnetic properties of In1.95Cr0.05Cu0.025O3 thin film annealed in hydrogen at different temperature (T-H = 300, 400, 500, and 600 degrees C) were investigated. The film was amorphous at T-H = 300 degrees C and had single phase In2O3 at T-H = 400 degrees C, while mixed phases of In2O3, In and CuCr2O4 were observed at T-H = 500 and 600 degrees C. At T-H = 400 degrees C the film showed semiconducting like behavior. The film's transparency decreased with increasing T-H, and optical band gap decreased from 3.67 eV for film annealed at T-H = 400 degrees C to 3.0 eV for film annealed at T-H = 600 degrees C. The magnetization increased for film annealed at T-H = 400 and 500 degrees C while it disappeared at T-H = 600 degrees C. The structural and physical properties were discussed and compared with that for film annealed in air at T-Air = 500 degrees C.

引用

页数：8

共 35 条

[1] Band gap narrowing and fluorescence properties of nickel doped SnO2 nanoparticles [J].