Ge-on-GaAs film resistance thermometers for cryogenic applications

被引：44
作者：
Mitin, V. F.
McDonald, P. C. [1 ]
Pavese, F.
Boltovets, N. S.
Kholevchuk, V. V.
Nemish, I. Yu.
Basanets, V. V.
Dugaev, V. K.
Sorokin, P. V.
Konakova, R. V.
Venger, E. F.
Mitin, E. V.
机构：
[1] Univ Southampton, Inst Cryogen, Southampton, Hants, England
[2] Natl Acad Sci Ukraine, V Lashkarev Inst Semicond Phys, Kiev, Ukraine
[3] Res & Prod Co MicroSensor, Kiev, Ukraine
[4] CNR, Ist Metrol G Colonnetti, I-10126 Turin, Italy
[5] State Res Inst Orion, Kiev, Ukraine
[6] Ukrainian Acad Sci, Inst Mat Sci Problems, Chernovtsy, Ukraine
[7] Kharkov Phys & Technol Inst, Ctr Nat Sci, UA-310108 Kharkov, Ukraine
来源：
CRYOGENICS | 2007年 / 47卷 / 9-10期
关键词：
semiconductors; thin films; cryoclectronics; instrumentation; magnetic measurements;
D O I：
10.1016/j.cryogenics.2007.04.014
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The range of sensors developed includes a family of single and dual element resistance thermometers based on Ge-on-GaAs films. The thin film devices were produced using standard semiconductor processing techniques and provide high device sensitivity within the range 0.03-500 K. The construction and characteristics of the sensors are presented together with a discussion of their sensitivities to magnetic fields and ionising radiation. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：474 / 482
页数：9
相关论文
共 27 条
[1]  
Amand JF, 1998, INTERNATIONAL CRYOGENIC ENGINEERING CONFERENCE 1998, P727
[2]   HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS [J].
AMBEGAOKAR, V ;
HALPERIN, BI ;
LANGER, JS .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2612-+
[3]   Thermometric characteristics approximation of germanium film temperature microsensors by orthonormal polynomials [J].
Bogdanova, NB ;
Terziyska, BM ;
Madge, H .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (11) :1-4
[4]  
Boltovets NS, 2003, AIP CONF PROC, V684, P399, DOI 10.1063/1.1627158
[5]   Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications [J].
Boltovets, NS ;
Kholevchuk, VV ;
Konakova, RV ;
Mitin, VF ;
Venger, EF .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 92 (1-3) :191-196
[6]  
DUGAEV VK, 2002, P IEEE SENS 2002 1 I, V2, P1275
[7]   COULOMB GAP AND LOW-TEMPERATURE CONDUCTIVITY OF DISORDERED SYSTEMS [J].
EFROS, AL ;
SHKLOVSKII, BI .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (04) :L49-L51
[8]  
Filippov YP, 1998, ADV CRYOG ENG, V43, P773
[9]   Low temperature thermometry in high magnetic fields [J].
Ihas, GG ;
Frederick, L ;
McFarland, JP .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1998, 113 (5-6) :963-968
[10]  
IHAS GG, 2003, B AM PHYS SOC, V48, P1277
123