Degradation of carrier lifetime in irradiated lasers

被引：2

作者：

Pailharey, E ^{[1
]}

Baggio, J ^{[1
]}

Gill, K ^{[1
]}

Vasey, F ^{[1
]}

机构：

[1] CEA, DAM, DIF, F-91680 Bruyeres Le Chatel, France

来源：

PHOTONICS FOR SPACE ENVIRONMENTS VII | 2000年 / 4134卷

关键词：

semiconductor laser; radiation damage; carrier lifetime; transient response;

D O I：

10.1117/12.405347

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

The effect of radiation damage on carrier lifetime in 1310nm InGaAsP/InP multi-quantum-well lasers irradiated with 0.8MeV neutrons, was investigated for fluences up to 6.9x10 (14)n/cm(2). The damage to the carrier lifetime was studied by measuring the transient response of irradiated lasers to incident optical pulses of 1064nm and 532nm wavelength, and by relative intensity noise measurements. The carrier lifetime was determined to be degraded to a similar extent in both the InGaAsP laser cavity and the surrounding InP material following radiation damage.

引用

页码：222 / 230

页数：9

共 11 条

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