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Direct experimental determination and modeling of VUV induced bulk conduction in dielectrics during plasma processing
被引:22
作者
:
Joshi, M
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
Joshi, M
[
1
]
McVittie, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
McVittie, JP
[
1
]
Saraswat, K
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
Saraswat, K
[
1
]
机构
:
[1]
Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
来源
:
2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE
|
2000年
关键词
:
D O I
:
10.1109/PPID.2000.870655
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:157 / 160
页数:4
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共 3 条
[1]
CHARGING DAMAGE FROM PLASMA-ENHANCED TEOS DEPOSITION
[J].
CHEUNG, KP
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Laboratories, Murray Hill
CHEUNG, KP
;
PAI, CS
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Laboratories, Murray Hill
PAI, CS
.
IEEE ELECTRON DEVICE LETTERS,
1995,
16
(06)
:220
-222
[2]
HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE
[J].
NING, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
NING, TH
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(07)
:3203
-3208
[3]
SHUTO, IRPS 1999 P, P356
←
1
→