Direct experimental determination and modeling of VUV induced bulk conduction in dielectrics during plasma processing

被引:22
作者
Joshi, M [1 ]
McVittie, JP [1 ]
Saraswat, K [1 ]
机构
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
来源
2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 2000年
关键词
D O I
10.1109/PPID.2000.870655
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:157 / 160
页数:4
相关论文
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[2]   HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE [J].
NING, TH .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3203-3208
[3]  
SHUTO, IRPS 1999 P, P356