Measurements of the Electric Field of Zero-Point Optical Phonons in GaAs Quantum Wells Support the Urbach Rule for Zero-Temperature Lifetime Broadening

被引:10
作者
Bhattacharya, Rupak [1 ]
Mondal, Richarj [1 ]
Khatua, Pradip [1 ]
Rudra, Alok [2 ]
Kapon, Eli [2 ]
Malzer, Stefan [3 ]
Doehler, Gottfried [4 ]
Pal, Bipul [1 ]
Bansal, Bhavtosh [1 ]
机构
[1] Indian Inst Sci Educ & Res Kolkata, Nadia 741246, W Bengal, India
[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland
[3] Univ Erlangen Nurnberg FAU, D-91058 Erlangen, Germany
[4] Max Planck Inst Sci Light, D-91058 Erlangen, Germany
关键词
ABSORPTION EDGE; DEPENDENCE; PHOTOLUMINESCENCE; TAIL;
D O I
10.1103/PhysRevLett.114.047402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study a specific type of lifetime broadening resulting in the well-known exponential "Urbach tail" density of states within the energy gap of an insulator. After establishing the frequency and temperature dependence of the Urbach edge in GaAs quantum wells, we show that the broadening due to the zero-point optical phonons is the fundamental limit to the Urbach slope in high-quality samples. In rough analogy with Welton's heuristic interpretation of the Lamb shift, the zero-temperature contribution to the Urbach slope can be thought of as arising from the electric field of the zero-point longitudinal-optical phonons. The value of this electric field is experimentally measured to be 3 kV cm(-1), in excellent agreement with the theoretical estimate.
引用
收藏
页数:6
相关论文
共 42 条
[1]   THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J].
ALLEN, PB ;
CARDONA, M .
PHYSICAL REVIEW B, 1981, 23 (04) :1495-1505
[2]   EFFECT OF ELECTROMAGNETIC RADIATION ON THE LAMB SHIFT [J].
AULUCK, FC ;
KOTHARI, DS .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 214 (1116) :137-142
[3]   Alloying induced degradation of the absorption edge of InAsxSb1-x [J].
Bansal, Bhavtosh ;
Dixit, V. K. ;
Venkataraman, V. ;
Bhat, H. L. .
APPLIED PHYSICS LETTERS, 2007, 90 (10)
[4]   Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells [J].
Bansal, Bhavtosh ;
Hayne, M. ;
Arora, B. M. ;
Moshchalkov, V. V. .
APPLIED PHYSICS LETTERS, 2007, 91 (25)
[5]   On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation [J].
Bhattacharya, Rupak ;
Pal, Bipul ;
Bansal, Bhavtosh .
APPLIED PHYSICS LETTERS, 2012, 100 (22)
[6]   Isotope effects on the optical spectra of semiconductors [J].
Cardona, M ;
Thewalt, MLW .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1173-1224
[7]   DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].
CODY, GD ;
TIEDJE, T ;
ABELES, B ;
BROOKS, B ;
GOLDSTEIN, Y .
PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483
[8]   BAND TAILS, PATH-INTEGRALS, INSTANTONS, POLARONS, AND ALL THAT [J].
COHEN, MH ;
CHOU, MY ;
ECONOMOU, EN ;
JOHN, S ;
SOUKOULIS, CM .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (01) :82-92
[9]   ULTRALOW VALUES OF THE ABSORPTION-COEFFICIENT OF SI OBTAINED FROM LUMINESCENCE [J].
DAUB, E ;
WURFEL, P .
PHYSICAL REVIEW LETTERS, 1995, 74 (06) :1020-1023
[10]   TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].
DOW, JD ;
REDFIELD, D .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :594-+