Fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminium grown by MBE.

被引：0

作者：

Aziz, AA ^{[1
]}

Missous, M ^{[1
]}

机构：

[1] Univ Manchester, Inst Sci & Technol, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England

来源：

EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 1997年

关键词：

D O I：

10.1109/EDMO.1997.668622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT (p-HEMT) with in-situ deposited epitaxial aluminium gate by MBE is reported. A simpler technique of fabricating HEMT without the inherent problem associated with gate recess is described. Its advantages over conventional method of fabricating HEMT are also shown. The near ideal epitaxial-Al/AlGaAs Schottky barrier contact is exploited in this work, resulting to an excellent I-V and thermal treatment characteristics. This epitaxial Al diodes have better ideality factor, higher barrier height and higher breakdown voltage but high series resistance than that of Au diodes.

引用

页码：297 / 302

页数：6