Compact analytical physical-based model of UPS TFT for active matrix displays addressing circuits simulation and design

被引:10
作者
Benzarti, W [1 ]
Plais, F [1 ]
De Luca, A [1 ]
Pribat, D [1 ]
机构
[1] Thales Res & Technol, F-91404 Orsay, France
关键词
active matrix; liquid crystal display (LCD); model; organic light emissive displays (OLEDs); polysilicon; thin-film transistor (TFT);
D O I
10.1109/TED.2003.821379
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Either at pixel or driver levels, low-temperature polysilicon (LTPS) is becoming a standard technology for the fabrication of thin-film transistors (TFTs) used in active matrix liquid crystal displays and in active matrix organic light emissive displays. Given the complexity of addressing or pixel circuits, simulation is becoming more and more necessary. In order to reach the required level of simulation efficiency, an accurate model has been developed. This model takes into account all the operating regimes, capacitors contributions, and frequency dispersion effects. In order to be able to simulate large number of matrix pixels and/or integrated drivers, this model is simple enough to allow simulator convergence. Based on 38 parameters, it presents an easy electrical parameters characterization methodology. Moreover, physical parameters use allows an easy modification of the model performances depending on polycrystalline silicon TFT technology properties and evolution.
引用
收藏
页码:345 / 350
页数:6
相关论文
共 20 条
[1]  
ANTOGNETTI P, 1988, SEMICONDUCTOR DEVICE
[2]  
BENZARTI W, 2001, P INT DISPL WORKSH, P431
[3]  
BENZARTI W, 2003, P ITN DISPL MAN C, P329
[4]  
*CAD DES SYST INC, SPECTR SIM
[5]  
CHAN MS, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P169, DOI 10.1109/IEDM.1994.383438
[6]  
CHENG Y, 1999, MOSFET MODELING BSIM, P109
[7]   AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS [J].
CHERN, HN ;
LEE, CL ;
LEI, TF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) :1240-1246
[8]  
DESMET H, 1995, SID, P119
[10]  
Ha Y. M., 2000, SID, P1116