Capacitor-Less 4F2 DRAM Using Vertical nGaAs Junction for Ultimate Cell Scalability

被引：3

作者：

Kim, Joon Pyo ^{[1
]}

Sim, Jaeho ^{[1
]}

Bidenko, Pavlo ^{[1
]}

Geum, Dae-Myeong ^{[1
]}

Kim, Seong Kwang ^{[1
]}

Shim, Joonsup ^{[1
]}

Kim, Jongmin ^{[2
]}

Kim, Sanghyeon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea

[2] Korea Adv Nano Fab Ctr KANC, Div Device Technol, Suwon 16499, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

DRAM; epitaxial growth; impact ionization; InGaAs biristor; npn junction; BIRISTOR;

D O I：

10.1109/LED.2022.3204436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we demonstrated capacitor-less 4F(2) 2-terminal InGaAs npn junction DRAM through careful device design. Using epitaxially grown InGaAs which have a steep junction, fabricated InGaAs bistable resistor (biristor) DRAM showed low voltage operation (similar to 2 V), fast switching speed (<:20 ns), long-term retention (10(3) s at 85 degrees C), and high endurance (>10(10) cycles) with a high sensing margin. Considering this feasibility study, we believe that InGaAs n(+)pn(+) junction DRAM could be a good technological option for future scalable 3D DRAM.

引用

页码：1834 / 1837

页数：4

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