Dynamic NBTI Simulation Coupling with Self-Heating Effect in SOI MOSFETs

被引：0

作者：

Li, Xiangbin ^{[1
]}

Ma, Chenyue ^{[1
,2
]}

Zhang, Lining ^{[2
]}

Sun, Fu ^{[1
]}

Lin, Xinnan ^{[1
]}

Chan, Mansun ^{[2
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, SECE, Shenzhen, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept ECE, Kowloon, Hong Kong, Peoples R China

来源：

PROCEEDINGS OF THE 2016 IEEE 23RD INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A methodology for simulating the device performance degradation considering the coupling effect of NBTI and SHE in SOI p-MOSFETs is proposed. NBTI models and thermal network are implanted into HiSIM with instantaneous parameter update during the transient simulation. The simulation results show that decoupling simulation will lead to non-ignorable inaccuracy.

引用

页码：43 / 46

页数：4

共 14 条

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