Nucleation and Crystal Growth of Si1-xGex Melts during Rapid Cooling Processes: A Molecular-Dynamics Study

被引：3

作者：

Xiao, Yanping ^{[1
]}

Taguchi, Jun ^{[1
]}

Motooka, Teruaki ^{[1
]}

Munetoh, Shinji ^{[1
]}

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8190395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 03期

关键词：

GE-ON-INSULATOR; SILICON; MOBILITY; SIGE;

D O I：

10.1143/JJAP.51.035601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si1-xGex (0 <= x <= 1) from supercooled melts, and the other is the growth rate of supercooled Si1-xGex melts using a crystalline Si1-xGex seed. The incubation time is found to be minimum at approximately 0.70 T-m (T-m: melting temperature for Si1-xGex). No nucleation was found when the temperature was higher than 0.75 T-m. The crystal growth rates of Si1-xGex peaked between 0.90 T-m and 0.94 T-m for both the [100] and [111] orientations. These results suggest that 0.90 T-m to 0.94 T-m of Si1-xGex (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process. (C) 2012 The Japan Society of Applied Physics

引用

页数：6

共 17 条

[1] First-shell bond lengths in SixGe1-x crystalline alloys [J].

Aubry, JC ;

Tyliszczak, T ;

Hitchcock, AP ;

Baribeau, JM ;

Jackman, TE .

PHYSICAL REVIEW B, 1999, 59 (20) :12872-12883

[2] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[3] DIRECT MEASUREMENTS OF THE VELOCITY AND THICKNESS OF EXPLOSIVELY PROPAGATING BURIED MOLTEN LAYERS IN AMORPHOUS-SILICON [J].

LOWNDES, DH ;

JELLISON, GE ;

PENNYCOOK, SJ ;

WITHROW, SP ;

MASHBURN, DN .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1389-1391

[4] HIGH HOLE MOBILITY IN STRAINED GE CHANNEL OF MODULATION-DOPED P-SI0.5GE0.5/GE/SI1-XGEX HETEROSTRUCTURE [J].

MIYAO, M ;

MURAKAMI, E ;

ETOH, H ;

NAKAGAWA, K ;

NISHIDA, A .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :912-915

[5] High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth [J].

Miyao, Masanobu ;

Toko, Kaoru ;

Tanaka, Takanori ;

Sadoh, Taizoh .

APPLIED PHYSICS LETTERS, 2009, 95 (02)

[6] Giant Ge-on-Insulator Formation by Si-Ge Mixing-Triggered Liquid-Phase Epitaxy [J].

Miyao, Masanobu ;

Tanaka, Takanori ;

Toko, Kaoru ;

Tanaka, Masanori .

APPLIED PHYSICS EXPRESS, 2009, 2 (04) :0455031-0455033

[7] Empirical bond-order potential description of thermodynamic properties of crystalline silicon [J].

Porter, LJ ;

Yip, S ;

Yamaguchi, M ;

Kaburaki, H ;

Tang, MJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :96-106

[8] SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-on-Insulator [J].

Sadoh, Taizoh ;

Toko, Kaoru ;

Kurosawa, Masashi ;

Tanaka, Takanori ;

Sakane, Takashi ;

Ohta, Yasuharu ;

Kawabata, Naoyuki ;

Yokoyama, Hiroyuki ;

Miyao, Masanobu .

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, 2011, 470 :8-13

[9] Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques [J].

Taraschi, G ;

Pitera, AJ ;

Fitzgerald, EA .

SOLID-STATE ELECTRONICS, 2004, 48 (08) :1297-1305

[10] EMPIRICAL INTERATOMIC POTENTIAL FOR SILICON WITH IMPROVED ELASTIC PROPERTIES [J].

TERSOFF, J .

PHYSICAL REVIEW B, 1988, 38 (14) :9902-9905

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