Channel width and length dependent flicker noise characterization for n-MOSFETs

被引：1

作者：

Aoki, H ^{[1
]}

Shimasue, M ^{[1
]}

机构：

[1] Agilent Technol Japan Ltd, Knowledge Serv, Design Technol Grp, Hachioji, Tokyo 1928510, Japan

来源：

ICMTS 2001: PROCEEDINGS OF THE 2001 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2001年

关键词：

D O I：

10.1109/ICMTS.2001.928672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate channel width and length dependent flicker noise analysis and modeling for sub-micron n-channel MOSFETs have been presented. It was found that the flicker noise in saturation region increased with channel width on the contrary to the existing theory. Drain current noise density measurements were performed with two different CMOS processes for analysis using our automated 1/f noise measurement system. Since model parameters in the model are all geometry dependent, only one size device is needed for the extractions.

引用

页码：257 / 261

页数：5