New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs

被引：60

作者：

Fleury, Dominique ^{[1
,2
]}

Cros, Antoine ^{[1
]}

Brut, Hugues ^{[1
]}

Ghibaudo, Gerard ^{[2
]}

机构：

[1] STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] Minatec, IMEP, F-38016 Grenoble, France

来源：

2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS | 2008年

关键词：

Y-function; compact model; CMOS; low field drain current; electrical parameters; MOSFET;

D O I：

10.1109/ICMTS.2008.4509332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed a new Y-function-based extraction methodology to overcome the difficulties encountered by applying the conventional techniques. Our method relies on a robust recursive algorithm which requires a limited number of input parameters on which the results have a weak dependence, and so an increased reliability. The obtained results are in line with the previous methods, but show an improved accuracy. Finally, parameter extraction performed through this technique has provided accurate and reliable results over a large range of MOSFET architectures.

引用

页码：160 / +

页数：2

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