Optical response of the graded-gap AlxGa1-xAs X-ray detector

被引：6

作者：

Pozela, K

Pozela, J

Dapkus, L

Jasutis, V

Silenas, A

Smith, KM

Bendorius, RA

机构：

[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[2] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[3] Gediminas Tech Univ, LT-2054 Vilnius, Lithuania

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 466卷 / 01期

关键词：

radiation imaging; light-emitting detectors;

D O I：

10.1016/S0168-9002(01)00825-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

It has been observed that only a part of the AlxGa1-xAs graded-gap layer with the energy gap gradient g > 20 eV/cm is active as a X-ray luminescence source. The thickness of the active layer is 30-50 mum. To increase the detectors optical response efficiency, the following methods are proposed and tested: 1. Reflection of the X-ray luminescence light, generated in the bulk AlxGa1-xAs layer, inside the total reflection angle theta; 2. Optical stimulation of the electron-hole radiative recombination. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：58 / 62

页数：5

共 4 条

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Pozela, J ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 434 (01) :169-172

[4]

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