Study of Ta-barrier and pore sealing dielectric layer interaction for enhanced barrier performance of Cu/ultralow κ(κ<2.2) interconnects

被引：9
作者：
Chen, XT [1 ]
Gui, D
Chi, DZ
Wang, WD
Babu, N
Hwang, N
Lo, GQ
Kumar, R
Balasubramanian, N
Kwong, DL
机构：
[1] Inst Microelect, Singapore 117685, Singapore
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 09期
关键词：
diffusion barriers; electric breakdown; interconnects; pore-sealing; porous dielectrics; ultralow kappa;
D O I：
10.1109/LED.2005.854384
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For Cu/ultralow kappa application, understanding of interfacial interaction between Ta and pore-sealing layer over porous dielectric is very important in order to achieve a good barrier performance. However, characterizing the effect of pore-sealing layer on barrier performance poses a big challenge. Most studies monitored degradation of the electrical performance of the Ta barrier after integration process with little discussions on interfacial interaction. In this letter, the interaction at the interface between Ta and pore-sealing layer deposited over porous SiLK (kappa similar to 2.2) film is investigated. The barrier performance is improved significantly by nitrogen incorporation during liner growth. This methodology is very effective for improving metal barrier and pore-sealing performance for Cu/ultralow kappa interconnects.
引用
收藏
页码：616 / 618
页数：3
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