Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires

被引:44
作者
Arango, Yulieth C. [1 ,2 ]
Huang, Liubing [3 ,4 ]
Chen, Chaoyu [5 ]
Avila, Jose [5 ]
Asensio, Maria C. [5 ]
Gruetzmacher, Detlev [1 ,2 ]
Lueth, Hans [1 ,2 ]
Lu, Jia Grace [1 ,2 ,3 ,4 ]
Schaepers, Thomas [1 ,2 ]
机构
[1] Res Ctr Julich GmbH, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
[2] Res Ctr Julich GmbH, JARA, D-52425 Julich, Germany
[3] Univ Southern Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA
[4] Univ Southern Calif, Dept Electrophys, Los Angeles, CA 90089 USA
[5] Synchrotron SOLEIL, St Aubin BP 48, F-91192 Gif Sur Yvette, France
基金
美国国家科学基金会;
关键词
UNIVERSAL CONDUCTANCE FLUCTUATIONS; PHASE; FILMS;
D O I
10.1038/srep29493
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We report on low-temperature transport and electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition. Magnetoresistance measurements unravel quantum interference phenomena, which depend on the cross-sectional dimensions of the nanowires. The observation of periodic Aharonov-Bohm-type oscillations is attributed to transport in topologically protected surface states in the Sb2Te3 nanowires. The study of universal conductance fluctuations demonstrates coherent transport along the Aharonov-Bohm paths encircling the rectangular cross-section of the nanowires. We use nanoscale angle-resolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental evidence on the nontrivial topological character of those surface states. The compiled study of the bandstructure and the magnetotransport response unambiguosly points out the presence of topologically protected surface states in the nanowires and their substantial contribution to the quantum transport effects, as well as the hole doping and Fermi velocity among other key issues. The results are consistent with the theoretical description of quantum transport in intrinsically doped quasi-one-dimensional topological insulator nanowires.
引用
收藏
页数:9
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