Zero-gap directional coupler switch integrated into a silicon-on insulator for 1.3-mu m operation

被引：31

作者：

Zhao, CZ ^{[1
]}

Liu, EK ^{[1
]}

Li, GZ ^{[1
]}

Gao, Y ^{[1
]}

Guo, CS ^{[1
]}

机构：

[1] XIAN JIAOTONG UNIV,DEPT ELECT ENGN,XIAN 710049,SHAANXI,PEOPLES R CHINA

来源：

OPTICS LETTERS | 1996年 / 21卷 / 20期

关键词：

D O I：

10.1364/OL.21.001664

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A silicon-on insulator (SOI) zero-gap directional coupler switch is studied based on the large-cross-section single-mode rib waveguide condition, the dual-mode interference principle, and the free-carrier plasma dispersion effect, in which the SOI technique uses silicon and silicon dioxide thermal bonding and backpolishing. The SOI is fabricated by potassium hydroxide anisotropic etching. Its insertion loss and cross talk are measured to be less than 4.81 dB and -18.6 dB, respectively, at a wavelength of 1.3 mu m and a switching voltage of 0.91 V. Response time is similar to 210 ns. (C) 1996 Optical Society of America

引用

页码：1664 / 1666

页数：3

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