Improved Inverted Organic Solar Cells With a Sol-Gel Derived Indium-Doped Zinc Oxide Buffer Layer

被引：33

作者：

Kyaw, Aung Ko Ko ^{[1
]}

Sun, Xiaowei ^{[1
]}

Zhao, De Wei ^{[1
]}

Tan, Swee Tiam ^{[3
]}

Divayana, Yoga ^{[1
]}

Demir, Hilmi Volkan ^{[1
,2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore

[3] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2010年 / 16卷 / 06期

关键词：

Indium-doped zinc oxide (IZO); inverted organic solar cell; sol-gel; THIN-FILMS; TRANSPARENT;

D O I：

10.1109/JSTQE.2009.2039200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied sol-gel derived indium-doped zinc oxide (IZO) with various indium contents as a functional buffer layer in inverted polymer: fullerene bulk-heterojunction solar cell. The short-circuit current density was observed to increase by doping indium in pure ZnO buffer layer. The maximum current density was obtained with a 1 at.% indium doping. Although the open-circuit voltage and fill factor reduced slightly, the inverted organic solar cell with 1 at.% IZO buffer layer showed a power conversion efficiency of 3.3%, which is higher compared to that (2.94%) of the device with undoped ZnO buffer layer under illumination of AM1.5G. The better performance is due to combined effects of improvement in charge collection and higher optical transmittance of electrode/buffer layer stack.

引用

页码：1700 / 1706

页数：7

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