Identification of boron clusters and boron-interstitial clusters in silicon

被引：33

作者：

Adey, J ^{[1
]}

Goss, JP

Jones, R

Briddon, PR

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Sch Nat Sci, Phys Ctr, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.67.245325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The identity of boron clusters and boron interstitial clusters in Si, produced by radiation or implantation, has been studied theoretically. Local vibration modes of the single-boron interstitial and the diboron split interstitial (B2I) and its metastable isomer as well as substitutional dimers are found to be in good agreement with observations. The modes of a diboron defect that has trapped three interstitials B2I3 are close to those observed for the boron-related I2 luminescent center. The annealing of these centers around 400 degreesC coincides with the main recovery of the electrical activity of boron, but the formation of defects which are metastable casts doubt on previous modeling strategies.

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页数：5

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共 35 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].

BACHELET, GB ;

HAMANN, DR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228

[2] ELECTRON-IRRADIATION DAMAGE IN SILICON CONTAINING HIGH-CONCENTRATIONS OF BORON [J].

BEAN, AR ;

MORRISON, SR ;

SMITH, RS ;

NEWMAN, RC .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (04) :379-&

[3] The fraction of substitutional boron in silicon during ion implantation and thermal annealing [J].

Caturla, MJ ;

Johnson, MD ;

de la Rubia, TD .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2736-2738

[4] TRANSIENT DIFFUSION OF ION-IMPLANTED B IN SI - DOSE, TIME, AND MATRIX DEPENDENCE OF ATOMIC AND ELECTRICAL PROFILES [J].

COWERN, NEB ;

JANSSEN, KTF ;

JOS, HFF .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6191-6198

[5] IMPLANTATION AND TRANSIENT B-DIFFUSION IN SI - THE SOURCE OF THE INTERSTITIALS [J].

EAGLESHAM, DJ ;

STOLK, PA ;

GOSSMANN, HJ ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1994, 65 (18) :2305-2307

[6] Self-interstitial clusters in silicon [J].

Eberlein, TAG ;

Pinho, N ;

Jones, R ;

Coomer, BJ ;

Goss, JP ;

Briddon, PR ;

Öberg, S .

PHYSICA B-CONDENSED MATTER, 2001, 308 :454-457

[7] Unexpected dynamics for self-interstitial clusters in silicon [J].

Estreicher, SK ;

Gharaibeh, M ;

Fedders, PA ;

Ordejon, P .

PHYSICAL REVIEW LETTERS, 2001, 86 (07) :1247-1250

[8] First-principles calculations of interstitial boron in silicon [J].

Hakala, M ;

Puska, MJ ;

Nieminen, RM .

PHYSICAL REVIEW B, 2000, 61 (12) :8155-8161

[9] NEGATIVE-U DEFECT - INTERSTITIAL BORON IN SILICON [J].

HARRIS, RD ;

NEWTON, JL ;

WATKINS, GD .

PHYSICAL REVIEW B, 1987, 36 (02) :1094-1103

[10] Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon [J].

Haynes, TE ;

Eaglesham, DJ ;

Stolk, PA ;

Gossmann, HJ ;

Jacobson, DC ;

Poate, JM .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1376-1378

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