Thermal exchange radius measurement: Application to nanowire thermal imaging

被引:61
作者
Puyoo, Etienne [1 ,2 ]
Grauby, Stephane [1 ]
Rampnoux, Jean-Michel [1 ]
Rouviere, Emmanuelle [2 ]
Dilhaire, Stefan [1 ]
机构
[1] Univ Bordeaux 1, CPMOH, F-33405 Talence, France
[2] CEA, DRT LITEN DTNM, LCRE, F-38054 Grenoble, France
关键词
MICROSCOPY; CALIBRATION; THERMOREFLECTANCE; CONDUCTIVITY; TEMPERATURE;
D O I
10.1063/1.3455214
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In scanning thermal microscopy (SThM) techniques, the thermal exchange radius between tip and sample is a crucial parameter. Indeed, it limits the lateral spatial resolution but, in addition, an accurate value of this parameter is necessary for a precise identification of thermal properties. But until now, the thermal exchange radius is usually estimated but not measured. This paper presents an experimental procedure, based on the 3 omega-SThM method, to measure its value. We apply this procedure to evaluate the thermal exchange radius of two commercial probes: the well-known Wollaston one and a new probe constituted of a palladium film on a SiO(2) substrate. Finally, presenting silicon nanowire images, we clearly demonstrate that this new probe can reach a spatial resolution better than 100 nm whereas the Wollaston probe hardly reaches a submicronic spatial resolution. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455214]
引用
收藏
页数:5
相关论文
共 22 条
  • [1] Thermoreflectance based thermal microscope
    Christofferson, J
    Shakouri, A
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (02) : 024903 - 1
  • [2] Thermal measurements of active semiconductor micro-structures acquired through the substrate using near IR thermoreflectance
    Christofferson, J
    Shakouri, A
    [J]. MICROELECTRONICS JOURNAL, 2004, 35 (10) : 791 - 796
  • [3] Surface displacement imaging by interferometry with a light emitting diode
    Dilhaire, S
    Grauby, S
    Jorez, S
    Lopez, LDP
    Rampnoux, JM
    Claeys, W
    [J]. APPLIED OPTICS, 2002, 41 (24) : 4996 - 5001
  • [4] Dynamical behavior of the scanning thermal microscope (SThM) thermal resistive probe studied using Si/SiGe microcoolers
    Ezzahri, Y
    Lopez, LDP
    Chapuis, O
    Dilhaire, S
    Grauby, S
    Claeys, W
    Volz, S
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (01) : 69 - 75
  • [5] Imaging setup for temperature, topography, and surface displacement measurements of microelectronic devices
    Grauby, S
    Dilhaire, S
    Jorez, S
    Claeys, W
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (01) : 645 - 647
  • [6] Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues
    Grauby, Stephane
    Salhi, Amine
    Lopez, Luis-David Patino
    Claeys, Wilfrid
    Charlot, Benoit
    Dilhaire, Stefan
    [J]. MICROELECTRONICS RELIABILITY, 2008, 48 (02) : 204 - 211
  • [7] High resolution vacuum scanning thermal microscopy of HfO2 and SiO2
    Hinz, M.
    Marti, O.
    Gotsmann, B.
    Lantz, M. A.
    Duerig, U.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [8] 3ω-scanning thermal microscope -: art. no. 033701
    Lefèvre, S
    Volz, S
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (03)
  • [9] Probe calibration of the scanning thermal microscope in the AC mode
    Lefèvre, S
    Saulnier, JB
    Fuentes, C
    Volz, S
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2004, 35 (3-6) : 283 - 288
  • [10] Thermal conductivity calibration for hot wire based dc scanning thermal microscopy
    Lefèvre, S
    Volz, S
    Saulnier, JB
    Fuentes, C
    Trannoy, N
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (04) : 2418 - 2423