Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation

被引:31
作者
Seo, Soonjoo [1 ]
Lee, Hyun Uk [1 ]
Lee, Soon Chang [2 ]
Kim, Yooseok [1 ]
Kim, Hyeran [1 ]
Bang, Junhyeok [3 ]
Won, Jonghan [1 ]
Kim, Youngjun [4 ]
Park, Byoungnam [4 ]
Lee, Jouhahn [1 ]
机构
[1] Korea Basic Sci Inst, Adv Nanosurface Res Grp, Daejeon 34133, South Korea
[2] Chungnam Natl Univ, Dept Appl Chem & Biol Engn, Daejeon 34134, South Korea
[3] Korea Basic Sci Inst, Spin Engn Phys Team, Daejeon 34133, South Korea
[4] Hongik Univ, Dept Mat Sci & Engn, Seoul 04066, South Korea
关键词
SEMICONDUCTOR; PERFORMANCE;
D O I
10.1038/srep23736
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors.
引用
收藏
页数:8
相关论文
共 48 条
[1]   Effect of van der Waals interactions on the structural and elastic properties of black phosphorus [J].
Appalakondaiah, S. ;
Vaitheeswaran, G. ;
Lebegue, S. ;
Christensen, N. E. ;
Svane, A. .
PHYSICAL REVIEW B, 2012, 86 (03)
[2]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[3]   Production of few-layer phosphorene by liquid exfoliation of black phosphorus [J].
Brent, Jack R. ;
Savjani, Nicky ;
Lewis, Edward A. ;
Haigh, Sarah J. ;
Lewis, David J. ;
O'Brien, Paul .
CHEMICAL COMMUNICATIONS, 2014, 50 (87) :13338-13341
[4]   REFINEMENT OF CRYSTAL STRUCTURE OF BLACK PHOSPHOROUS [J].
BROWN, A ;
RUNDQVIST, S .
ACTA CRYSTALLOGRAPHICA, 1965, 19 :684-+
[5]   Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating [J].
Buscema, Michele ;
Groenendijk, Dirk J. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NATURE COMMUNICATIONS, 2014, 5
[6]   Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors [J].
Buscema, Michele ;
Groenendijk, Dirk J. ;
Blanter, Sofya I. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NANO LETTERS, 2014, 14 (06) :3347-3352
[7]   EFFECT OF PRESSURE ON BONDING IN BLACK PHOSPHORUS [J].
CARTZ, L ;
SRINIVASA, SR ;
RIEDNER, RJ ;
JORGENSEN, JD ;
WORLTON, TG .
JOURNAL OF CHEMICAL PHYSICS, 1979, 71 (04) :1718-1721
[8]   Isolation and characterization of few-layer black phosphorus [J].
Castellanos-Gomez, Andres ;
Vicarelli, Leonardo ;
Prada, Elsa ;
Island, Joshua O. ;
Narasimha-Acharya, K. L. ;
Blanter, Sofya I. ;
Groenendijk, Dirk J. ;
Buscema, Michele ;
Steele, Gary A. ;
Alvarez, J. V. ;
Zandbergen, Henny W. ;
Palacios, J. J. ;
van der Zant, Herre S. J. .
2D MATERIALS, 2014, 1 (02)
[9]   Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy [J].
Chen, H ;
Li, YK ;
Peng, CS ;
Liu, HF ;
Liu, YL ;
Huang, Q ;
Zhou, JM ;
Xue, QK .
PHYSICAL REVIEW B, 2002, 65 (23) :1-4
[10]   Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors [J].
Cui, Shumao ;
Pu, Haihui ;
Wells, Spencer A. ;
Wen, Zhenhai ;
Mao, Shun ;
Chang, Jingbo ;
Hersam, Mark C. ;
Chen, Junhong .
NATURE COMMUNICATIONS, 2015, 6