Fabrication and characterization of aluminum-doped zinc oxide Schottky diodes on n-GaN

被引：12
作者：
Han, T. [1 ]
Shi, Y. [1 ]
Wu, H. [1 ]
Liu, C. [1 ]
机构：
[1] Wuhan Univ, Sch Phys & Technol, Dept Phys, Key Lab Artificial Micro & Nanostruct,Minist Educ, Wuhan 430072, Peoples R China
来源：
CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 06期
关键词：
Aluminum-doped zinc oxide; Gallium nitride; Schottky contacts; BEAM EVAPORATION; THIN-FILMS; PHOTODETECTORS; ELECTRODES; CONTACTS; MODFETS;
D O I：
10.1016/j.cap.2012.04.029
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aluminum-doped zinc oxide (AZO) films were prepared using an electron-beam evaporation system to form Schottky contacts on n-type GaN at depositing temperatures varied from 100 to 400 degrees C. The current-voltage (I-V) measurements which showed a rectifying characteristic were carried out to deduce the Schottky barrier heights (SBHs) according to the thermionic emission theory. The SBHs were calculated by using a linear curve fit to forward characteristics of In(I) against V, and have a small alteration around 0.7 eV. Hall-effect measurements were carried out to illuminate the alteration of the SBHs that were mainly affected by the carrier concentration of the AZO films. It has been found that the SBH ascends as the carrier concentration decrease, and the dislocations play an important role on the leakage current of the contacts. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：1536 / 1540
页数：5
相关论文
共 27 条
[1]   Characterization of electron beam evaporated ZnO thin films and stacking ZnO fabricated by e-beam evaporation and rf magnetron sputtering for the realization of resonators [J].
Al Asmar, R ;
Zaouk, D ;
Bahouth, P ;
Podleki, J ;
Foucaran, A .
MICROELECTRONIC ENGINEERING, 2006, 83 (03) :393-398
[2]   Electrical transport characteristics of Au/n-GaN Schottky diodes [J].
Benamara, Z ;
Akkal, B ;
Talbi, A ;
Gruzza, B .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (2-3) :519-522
[3]  
Chen C.H., 2001, IEEE PHOTON TECH LET, V13
[4]   The characteristics of different transparent electrodes on GaN photodetectors [J].
Chiou, YZ ;
Chiou, JR ;
Su, YK ;
Chang, SJ ;
Huang, BR ;
Chang, CS ;
Lin, YC .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 80 (01) :201-204
[5]   Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors [J].
Chiou, YZ ;
Su, YK ;
Chang, SJ ;
Chen, JF ;
Chang, CS ;
Liu, SH ;
Lin, YC ;
Chen, CH .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6A) :3643-3645
[6]   Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates [J].
Chuang, R. W. ;
Chang, S. P. ;
Chang, S. J. ;
Chiou, Y. Z. ;
Lu, C. Y. ;
Lin, T. K. ;
Lin, Y. C. ;
Kuo, C. F. ;
Chang, H. M. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
[7]   Effect of thickness on structural, electrical, and optical properties of ZnO: Al films deposited by pulsed laser deposition [J].
Dong, Bin-Zhong ;
Fang, Guo-Jia ;
Wang, Jian-Feng ;
Guan, Wen-Jie ;
Zhao, Xing-Zhong .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[8]   Highly doped thin-channel GaN-metal-semiconductor field-effect transistors [J].
Gaska, R ;
Shur, MS ;
Hu, X ;
Yang, JW ;
Tarakji, A ;
Simin, G ;
Khan, A ;
Deng, J ;
Werner, T ;
Rumyantsev, S ;
Pala, N .
APPLIED PHYSICS LETTERS, 2001, 78 (06) :769-771
[9]   Low dark current GaN schottky UV photodiodes using oxidised IrNi schottky contact [J].
Jiang, H ;
Egawa, T ;
Ishikawa, H ;
Dou, YB ;
Shao, CL ;
Jimbo, T .
ELECTRONICS LETTERS, 2003, 39 (22) :1604-1606
[10]   Hydrogen-sensitive GaN Schottky diodes [J].
Kim, J ;
Gila, BP ;
Chung, GY ;
Abernathy, CR ;
Pearton, SJ ;
Ren, F .
SOLID-STATE ELECTRONICS, 2003, 47 (06) :1069-1073
123