Theory of phonon-assisted intraband transitions in semiconductor quantum dots

被引:0
作者
Kuhn, Sandra [1 ]
Schulze, Franz [1 ]
Richter, Marten [1 ]
Knorr, Andreas [1 ]
Carmele, Alexander [1 ]
机构
[1] Tech Univ Berlin, Inst Theoret Phys Nichtlineare Opt & Quantenelekt, D-10623 Berlin, Germany
来源
ULTRAFAST PHENOMENA AND NANOPHOTONICS XVI | 2012年 / 8260卷
关键词
Electron-phonon coupling; intraband transition; independent boson model; Jaynes-Cummings model;
D O I
10.1117/12.906611
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The investigation of the intersubband dynamics occurring in the conduction band of doped semiconductor quantum dots (QD's) has emerged as a powerful tool to probe their electronic structure and properties. Here, the temperature, the dephasing and the relaxation dynamics are of interest, both from a fundamental point of view but also regarding the performance of QD-based optoelectronic devices. Whereas the lineshape of QD interband transitions is well described by the independent boson model treating a diagonal electron-phonon coupling. For intraband transitions both diagonal and non-diagonal electron-phonon coupling are relevant. Typically, such problems involving diagonal and non-diagonal coupling are treated within approximate or perturbative approaches. Here, we present a fully quantized theory to calculate the coupled electron-phonon dynamics based on a non-perturbative equation of motion approach reproducing also correct results for limits of known exactly solvable models.
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页数:8
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