Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics

被引:788
作者
Wu, Wenzhuo [1 ,2 ]
Wang, Zhong Lin [1 ,3 ,4 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Purdue Univ, Sch Ind Engn, W Lafayette, IN 47907 USA
[3] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China
[4] Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China
基金
美国国家科学基金会;
关键词
ENHANCING LIGHT-EMISSION; ZNO NANOWIRES; ENERGY-CONVERSION; STRAIN SENSORS; TEMPERATURE-DEPENDENCE; HIGH-PERFORMANCE; PRESSURE SENSOR; ELECTRIC-FIELD; LAYER MOS2; MONOLAYER;
D O I
10.1038/natrevmats.2016.31
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Low-dimensional piezoelectric semiconductor nanomaterials, such as ZnO and GaN, have superior mechanical properties and can be integrated into flexible devices that can be subjected to large strain. More importantly, the coupling between piezoelectric polarization and semiconductor properties (for example, electronic transport and photoexcitation) in these materials gives rise to unprecedented device characteristics. This has increased research interest in the emerging fields of piezotronics and piezo-phototronics, which offer new means of manipulating charge-carrier transport, generation, recombination or separation in the controlled operation of flexible devices through the application of external mechanical stimuli. We review the recent progress in advancing our fundamental understanding and in realizing practical applications of piezotronics and piezo-phototronics, and provide an in-depth discussion of future research directions.
引用
收藏
页数:17
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