Temperature dependence on bandgap of semiconductor photocatalysts

被引：55

作者：

Cho, Y. ^{[1
]}

Yamaguchi, A. ^{[1
]}

Uehara, R. ^{[1
]}

Yasuhara, S. ^{[1
]}

Hoshina, T. ^{[1
]}

Miyauchi, M. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan

来源：

JOURNAL OF CHEMICAL PHYSICS | 2020年 / 152卷 / 23期

关键词：

OPTICAL-PROPERTIES; THIN-FILMS; METHANE;

D O I：

10.1063/5.0012330

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Light irradiation onto a semiconductor generates heat; however, its electronic structure under high temperature has not yet been well investigated. In this study, we have carefully examined the temperature dependence on the bandgap of simple metal oxides, which are well-known photocatalysts, i.e., TiO2, CeO2, Nb2O5, SnO2 Ta2O5, WO3, ZnO, and ZrO2, using operando UV-visible spectroscopy under controlled temperature (from room temperature to 500 degrees C). Consequently, a linear decrease in bandgap was seen as a function of temperature with a different slope for each semiconductor. We found that the slope was dependent on the bonding distance between metal and oxygen. This finding is essential to develop a photocatalyst used under the condition involving photo-thermal effect.

引用

页数：5

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