High-performance full-solution-processed quantum dot light-emitting diodes with a doped hole injection layer

Full solution-processed quantum dot light-emitting diodes are the potential ones for future flat panel displays and solid state lighting. The imbalance of holes and electrons due to the larger hole injection barrier is still the critical obstacle for full solution-processed quantum dot light-emitting diodes with high performance. Therefore, improving the hole injection level is the first consideration for us. In this paper, we doped graphene oxide into PEDOT:PSS (volume ratio: 1:2) to form hole injection layer PEDOT:PSS-GO, and then fabricated the high-efficiency full solution-processed quantum dot lightemitting diodes with inverted architecture: ITO/ZnMgO/QDs/PVK/PEDOT:PSS-GO/Al. The maximum brightness of 51392 cd/m(2), and peak current efficiency of 7.60 cd/A were achieved, showing about 1.3 fold improvement compared to the reference ones. Meanwhile, the conventional ones: ITO/PEDOT:PSS-GO/PVK/QDs/ZnMgO/Al, also fabricated by the same mean, exhibited 0.29 fold increase in maximum brightness. The above results demonstrate that the introduction of GO is beneficial for both normal and inverted full solution-processed quantum dot light-emitting diodes, and is a more effective method for high-performance full solution-processed quantum dot light-emitting diode with inverted structure.