Effect of surface oxidation on thermal shock resistance of the ZrB2-SiC-ZrC ceramic

被引:41
作者
Wu, Zhanjun [1 ]
Wang, Zhi [1 ]
Shi, Guodong [1 ]
Sheng, Jin [2 ]
机构
[1] Dalian Univ Technol, Sch Aeronaut & Astronaut, Fac Vehicle Engn & Mech, State Key Lab Struct Anal Ind Equipment, Dalian 116024, Peoples R China
[2] Troop 91550 PLA, Dalian 116023, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Ceramics; Strength; SEM; HIGH-TEMPERATURE CERAMICS; SHS DYNAMIC COMPACTION; IN-SITU SYNTHESIS; SILICON-CARBIDE; MECHANICAL-PROPERTIES; COMPOSITES; MICROSTRUCTURE; FABRICATION; BEHAVIOR; CONDUCTIVITY;
D O I
10.1016/j.compscitech.2011.06.008
中图分类号
TB33 [复合材料];
学科分类号
摘要
The isothermal oxidation of the ZrB2-SiC-ZrC ceramic was carried out in static air at a constant temperature of 1000 +/- 15 degrees C, 1200 +/- 15 degrees C and 1400 +/- 15 degrees C for 30 min, respectively. Compared with the original strength of 580 MPa, the strength for the specimen oxidized at 1000 degrees C, 1200 degrees C and 1400 degrees C for 30 min increased to 609 MPa, 656 MPa and 660 MPa, respectively, because the flaws in the surface of the specimen were sealed by the oxide layer. The thermal shock resistance of the specimens before and after the oxidation was measured by the water quenching. The measured Delta T-crit for the specimen oxidized at 1000 degrees C, 1200 degrees C and 1400 degrees C were 352 degrees C, 453 degrees C and 623 degrees C, respectively, which was obviously higher than 270 degrees C for the unoxidized specimen. The improvement in the thermal shock resistance was attributed to the formation the oxide layer on the surface of the specimen. The results here pointed to a promising method for improving strength and thermal shock resistance of ZrB2-based ceramics. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1501 / 1506
页数:6
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