Efficient heat dissipation from β-Ga2O3 film directly bonded on diamond substrate

被引：0

作者：

Matsumae, T. ^{[1
]}

Kurashima, Y. ^{[1
]}

Takagi, H. ^{[1
]}

Umezawa, H. ^{[2
]}

Watanabe, H. ^{[3
]}

Ito, T. ^{[4
]}

Higurashi, E. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Namiki 1-2-1, Tsukuba, Ibaraki, Japan

[2] Natl Inst Adv Ind Sci & Technol, Midoriokai 1-8-31, Ikeda, Osaka, Japan

[3] Natl Inst Adv Ind Sci & Technol, Umezono 1-1-1, Tsukuba, Ibaraki, Japan

[4] Natl Inst Adv Ind Sci & Technol, Higashi 1-1-1, Tsukuba, Ibaraki, Japan

来源：

2022 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2022) | 2022年

关键词：

Ga2O3; diamond; thermal management; direct bonding;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A beta-Ga2O3 film was directly bonded with a diamond heat spreader for efficient heat dissipation. Ga2O3 is expected as a future material for power electronics, but it has a heat dissipation problem due to its low thermal conductivity. We demonstrated that thermal resistance could be improved by direct bonding with a diamond heat spreader.

引用

页码：99 / 100

页数：2

共 7 条

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