Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

被引:1
作者
Lounis, Z. [1 ]
Bouslama, M. [1 ]
Hamaida, K. [1 ]
Jardin, C.
Abdellaoui, A. [1 ]
Ouerdane, A. [1 ]
Ghaffour, M. [1 ]
Berrouachedi, N. [1 ]
机构
[1] Ecole Normale Super Enseignements Technol ENSET O, Lab Mat LABMAT, Oran Mnaouer, Oran, Algeria
来源
MATERIAUX 2010 | 2012年 / 28卷
关键词
PHOSPHORUS; STABILITY; INDIUM;
D O I
10.1088/1757-899X/28/1/012022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We give the great interest to characterise the InP and InPO4/InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In2O3. We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.
引用
收藏
页数:8
相关论文
共 13 条
[1]   AES AND EELS ANALYSIS OF THE INTERACTION BETWEEN PHOSPHORUS AND METALLIC INDIUM [J].
BOUSLAMA, M ;
GHAMNIA, M ;
GRUZZA, B ;
MILOUA, F ;
JARDIN, C .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1994, 68 :377-382
[2]   Effects of the electron beam on InP(100) [J].
Bouslama, M ;
Monteil, Y ;
Younes, G ;
Jardin, C ;
Ghamnia, M .
VACUUM, 1996, 47 (01) :27-32
[3]   The study of InPO4/InP(100) by EELS and AES [J].
Bouslama, M ;
Lounis, Z ;
Ghaffour, M ;
Ghamnia, M ;
Jardine, C .
VACUUM, 2002, 65 (02) :185-191
[4]  
Bouslama M, 1988, THESIS U C BERNARD L
[5]  
Drouin D, PROGRAM CASINO VERSI
[6]   Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor [J].
Feng, M ;
Holonyak, N ;
Chu-Kung, B ;
Walter, G ;
Chan, R .
APPLIED PHYSICS LETTERS, 2004, 84 (23) :4792-4794
[7]  
Jardin C, 1988, MICROSC SPECTROSCO E, V13, P395
[8]   Study by AES and EELS spectroscopies of antimony and phosphorus evaporated on massive indium and on cleaned InP [J].
Lounis, Z. ;
Bouslama, M. ;
Berrouachedi, N. ;
Jardin, C. ;
Auvray, L. ;
Abdellaoui, A. ;
Ouerdane, A. ;
Ghaffour, M. .
VACUUM, 2008, 82 (05) :529-534
[9]  
MYKLEBUST RL, 1991, ELECTRON PROBE QUANTITATION, P177
[10]   Study by EELS and EPES of the stability of InPO4/InP system [J].
Ouerdane, A. ;
Bouslama, M. ;
Ghaffour, M. ;
Abdellaoui, A. ;
Hamaida, K. ;
Lounis, Z. ;
Monteil, Y. ;
Berrouachedi, N. ;
Ouhaibi, A. .
APPLIED SURFACE SCIENCE, 2008, 254 (22) :7394-7400