Interface formation between CuIn1-xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis

被引：16

作者：

Buecheler, S. ^{[1
]}

Pianezzi, F. ^{[1
]}

Fella, C. ^{[1
]}

Chirila, A. ^{[1
]}

Decock, K. ^{[2
]}

Burgelman, M. ^{[2
]}

Tiwari, A. N. ^{[1
]}

机构：

[1] Empa, Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland

[2] Univ Ghent, B-9000 Ghent, Belgium

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

基金：

瑞士国家科学基金会; 比利时弗兰德研究基金会;

关键词：

Solar cells; CIGS; Buffer layer; In2S3; Spray pyrolysis; Diode quality; Interface; Band alignment; FILM SOLAR-CELLS; ELECTRONIC-PROPERTIES; CU(IN; GA)SE-2;

D O I：

10.1016/j.tsf.2011.01.370

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interface formation in CuIn1-xGaxSe2 (CIGS) based solar cells with In2S3 buffer layer deposited by ultrasonic spray pyrolysis (USP) is presented. The photovoltaic properties of solar cells with USP-In2S3 buffer depend strongly on the [Ga]/([Ga] +/- [In]) ratio in the bulk of the absorber and on the surface composition. It was found that the band alignment between the CIGS and In2S3 changes from spike to cliff at a [Ga]/ ([Ga] +/- [In]) ratio between 0.22 and 0.23. A significant increase in V-OC and FF is observed for CIGS solar cells with USP-In2S3 buffer layer after device annealing at 200 degrees C in air, which can be correlated to an increase in activation energy caused by a band gap widening of the surface region of the absorber due to copper depletion. (C) 2011 Published by Elsevier B.V.

引用

页码：7560 / 7563

页数：4

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