Spin freezing by Anderson localization in one-dimensional semiconductors

被引：7

作者：

Echeverria-Arrondo, C. ^{[1
]}

Sherman, E. Ya. ^{[1
,2
]}

机构：

[1] Univ Pais Vasco UPV EHU, Dept Phys Chem, E-48080 Bilbao, Spain

[2] IKERBASQUE Basque Fdn Sci, E-48011 Bilbao, Bizkaia, Spain

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 08期

关键词：

QUANTUM-WELLS; SPINTRONICS; SUPPRESSION; RELAXATION; DYNAMICS;

D O I：

10.1103/PhysRevB.85.085430

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One-dimensional quantum wires are considered as prospective elements for spin transport and manipulation in spintronics. We study spin dynamics in semiconductor GaAs-like nanowires with disorder and spin-orbit interaction by using a rotation in the spin subspace gauging away the spin-orbit field. If the disorder is sufficiently strong, the spin density after a relatively short relaxation time reaches a plateau. This effect is a manifestation of the Anderson localization and depends in a universal way on the disorder and the spin-orbit coupling strength. As a result, at a given disorder, semiconductor nanowires can permit a long-term spin polarization tunable with the spin-orbit interactions.

引用

页数：5

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