TCAD Modeling and Simulation of Non-Resonant Plasmonic THz Detector Based on Asymmetric Silicon MOSFETs

被引：0

作者：

Ryu, Min Woo ^{[1
]}

Lee, Jeong Seop ^{[1
]}

Park, Kibog ^{[1
]}

Kim, Kyung Rok ^{[1
]}

Park, Wook-Ki ^{[2
]}

Han, Seong-Tae ^{[2
]}

机构：

[1] Ulsan Natl Inst Sci & Technol UNIST, Sch Elect & Comp Engn, Ulsan 689798, South Korea

[2] Korea Electrotechnol Res Inst KERI, Adv Med Device Res Ctr, Ansan 426910, Gyeonggi, South Korea

来源：

2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013) | 2013年

关键词：

plasmonic terahertz wave; nonresonant regime; silicon FET detector; responsivity; asymmetry ratio; TERAHERTZ RADIATION;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We report the experiments of plasmonic terahertz (THz) wave detector based on silicon field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. The detector responsivity (R-V) as a function of gate voltage has been successfully controlled by the radiation power in agreement with the plasma wave detection theory. To investigate the effects of the overdamped charge asymmetry on R-V, FET structure with the asymmetric source and drain area under the gate has been proposed. The enhanced R-V according to the increase of asymmetry ratio between source and drain region has been confirmed experimentally.

引用

页码：200 / 203

页数：4

共 12 条

[1] Current driven resonant plasma wave detection of terahertz radiation:: Toward the Dyakonov-Shur instability
Boubanga-Tombet, S.
Teppe, F.
Coquillat, D.
Nadar, S.
Dyakonova, N.
Videlier, H.
Knap, W.
Shchepetov, A.
Gardes, C.
Roelens, Y.
Bollaert, S.
Seliuta, D.
Vadoklis, R.
Valusis, G.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (21)
[2] SHALLOW-WATER ANALOGY FOR A BALLISTIC FIELD-EFFECT TRANSISTOR - NEW MECHANISM OF PLASMA-WAVE GENERATION BY DC CURRENT
DYAKONOV, M
SHUR, M
[J]. PHYSICAL REVIEW LETTERS, 1993, 71 (15) : 2465 - 2468
[3] Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid
Dyakonov, M
Shur, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (03) : 380 - 387
[4] Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
Knap, W
Teppe, F
Meziani, Y
Dyakonova, N
Lusakowski, J
Boeuf, F
Skotnicki, T
Maude, D
Rumyantsev, S
Shur, MS
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (04) : 675 - 677
[5] Nonresonant detection of terahertz radiation in field effect transistors
Knap, W
Kachorovskii, V
Deng, Y
Rumyantsev, S
Lü, JQ
Gaska, R
Shur, MS
Simin, G
Hu, X
Khan, MA
Saylor, CA
Brunel, LC
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9346 - 9353
[6] Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Knap, Wojciech
Dyakonov, Mikhail
Coquillat, Dominique
Teppe, Frederic
Dyakonova, Nina
Lusakowski, Jerzy
Karpierz, Krzysztof
Sakowicz, Maciej
Valusis, Gintaras
Seliuta, Dalius
Kasalynas, Irmantas
El Fatimy, Abdelouahad
Meziani, Y. M.
Otsuji, Taiichi
[J]. JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2009, 30 (12) : 1319 - 1337
[7] Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors
Lisauskas, Alvydas
Pfeiffer, Ullrich
Oejefors, Erik
Bolivar, Peter Haring
Glaab, Diana
Roskos, Hartmut G.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (11)
[8] Lu J.-Q., 2011, APPL PHYS LETT, V78, P12
[9] Ojefors E., 2009, IEEE J SOLID-ST CIRC, V44
[10] Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
Popov, V. V.
Fateev, D. V.
Otsuji, T.
Meziani, Y. M.
Coquillat, D.
Knap, W.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (24)

← 1 2 →