High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

被引：6

作者：

Togashi, Rie ^{[1
]}

Thieu, Quang Tu

Murakami, Hisashi ^{[1
]}

Kumagai, Yoshinao ^{[1
,3
]}

Ishitani, Yoshihiro ^{[4
]}

Monemar, Bo ^{[2
]}

Koukitu, Akinori ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[2] Tokyo Univ Agr & Technol, Global Innovat Res Org, Koganei, Tokyo 1848588, Japan

[3] Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan

[4] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 422卷

基金：

日本学术振兴会;

关键词：

Characterization; Hydride vapor phase epitaxy; Nitrides; Semiconducting indium compounds; FUNDAMENTAL-BAND GAP; INCL3; CRYSTALS; THERMODYNAMICS;

D O I：

10.1016/j.jcrysgro.2015.04.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The increase of InN growth rate by a newly developed two-step precursor generation hydride vapor phase epitaxy (HVPE) was investigated for the preparation of freestanding InN and InGaN substrates. An elevated growth rate was achieved by the complete conversion of InCl generated in the first source zone to InCl3 in the second source zone, by the supply of additional Cl-2. The growth rate reached 12.4 mu m/h at a growth temperature of 600 degrees C, and the rate was observed to decrease above this temperature. Specular lnN layers grown at 650 degrees C exhibited a sharp room temperature photoluminescence peak at 0.73 eV with a bulk electron concentration of 1.2 x 10(18) cm(-3). (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：15 / 19

页数：5

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