Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substrates

被引：15

作者：

Lin, Yu-Sheng ^{[2
]}

Lin, Kung-Hsuan ^{[1
]}

Chang, Yu-Ming ^{[1
]}

Yeh, J. Andrew ^{[2
,3
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[2] Natl Tsing Hua Univ, Inst NanoEngn & MicroSyst, Hsinchu 30013, Taiwan

[3] ITRC, Natl Appl Res Labs, Hsinchu 30013, Taiwan

来源：

SURFACE SCIENCE | 2012年 / 606卷 / 1-2期

关键词：

Semiconductors; Heterostructures; Patterned sapphire; Nonpolar GaN;

D O I：

10.1016/j.susc.2011.08.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nonpolar (1010) m-plane GaN epilayer was grown on nanoscale patterned c-plane sapphire substrates by MOCVD. The nanoscale patterned sapphire substrates were fabricated by natural lithography and dry etching methods. The nanopatterns are defined particularly with no c-plane surfaces exposed. The (1010) m-plane GaN epilayer was characterized by X-ray diffraction and atomic force microscope, which indicated the FWHM of the rocking curve is 316 arcsec and the rms surface roughness is 0.3 nm, respectively. The SEM and TEM studies reveal that the m-plane GaN grains nucleate on the exposed n-plane facets of the etched c-plane sapphire substrates. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：L1 / L4

页数：4

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