Fabrication of sub-100 nm patterns using near-field mask lithography with ultra-thin resist process

被引：23

作者：

Ito, T ^{[1
]}

Ogino, M ^{[1
]}

Yamada, T ^{[1
]}

Inao, Y ^{[1
]}

Yamaguchi, T ^{[1
]}

Mizutani, N ^{[1
]}

Kuroda, R ^{[1
]}

机构：

[1] Canon Inc, Leading Edge Fus Res Ctr, Atsugi, Kanagawa 2430193, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2005年 / 18卷 / 03期

关键词：

near-field light; photolithography; chemically amplified resist; tri-layer resist process; dry etching; electro-magnetic analysis;

D O I：

10.2494/photopolymer.18.435

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A resist pattern of half-pitch (hp) 50 run, 120 nm deep was fabricated with near-field lithography (NFL) of Wine (lambda = 365 nm) using a positive-tone chemically amplified resist and a tri-layer resist process developed for NFL. The experimental results were in close agreement with the numerical results of electro-magnetic analysis using finite-difference time domain (FDTD) method. The possibility of fabricating sub-50 nm patterns was discussed over the numerical results.

引用

页码：435 / 441

页数：7

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