Single event effect characterization of high density commercial NAND and NOR nonvolatile flash memories

被引：62

作者：

Irom, Farokh ^{[1
]}

Nguyen, Duc N. ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

catastrophic; destructive; dielectric gate rupture; micro-dose; nonvolatile memory;

D O I：

10.1109/TNS.2007.909984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heavy ion single-event measurements on a variety of high density commercial NAND and NOR flash memories were reported. Three SEE phenomena were investigated: SEUs, SEFIs, and catastrophic loss of ability to erase and write to the device. Although for all devices under test SEUs and SEFIs were observed, these commercial high densities devices appear to be much less susceptible than typical flash devices that have been tested lately. A new high current phenomenon in the high density NAND flash memories and charge pump failure in the NOR flash memory are discussed.

引用

页码：2547 / 2553

页数：7

共 24 条

[1] Heavy ion irradiation of thin gate oxides [J].

Ceschia, M ;

Paccagnella, A ;

Turrini, M ;

Candelori, A ;

Ghidini, G ;

Wyss, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2648-2655

[2] Heavy-ion-induced soft breakdown of thin gate oxides [J].

Conley, JF ;

Suehle, JS ;

Johnston, AH ;

Wang, B ;

Miyahara, T ;

Vogel, EM ;

Bernstein, JB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :1913-1916

[3] HEAVY-ION INDUCED SINGLE HARD ERRORS ON SUBMICRONIC MEMORIES [J].

DUFOUR, C ;

GARNIER, P ;

CARRIERE, T ;

BEAUCOUR, J ;

ECOFFET, R ;

LABRUNEE, M .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :1693-1697

[4]

Edmonds Larry, COMMUNICATION

[5] Microdose induced data loss on floating gate memories [J].

Guertin, Steven M. ;

Nguyen, Duc N. ;

Patterson, Jeffrey D. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3518-3524

[6] Breakdown of gate oxides during irradiation with heavy ions [J].

Johnston, AH ;

Swift, GM ;

Miyahira, T ;

Edmonds, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :2500-2508

[7] SEE sensitivities of selected advanced flash and first-in-first-out memories [J].

Koga, R ;

Tran, V ;

George, J ;

Crawford, K ;

Crain, S ;

Zakrzewski, M ;

Yu, P .

2004 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2004, :47-53

[8] ON THE SUITABILITY OF NONHARDENED HIGH-DENSITY SRAMS FOR SPACE APPLICATIONS [J].

KOGA, R ;

CRAIN, WR ;

CRAWFORD, KB ;

LAU, DD ;

PINKERTON, SD ;

YI, BK ;

CHITTY, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1507-1513

[9] New experimental findings for single-event gate rupture in MOS capacitors and linear devices [J].

Lum, GK ;

Boruta, N ;

Baker, JM ;

Robinette, L ;

Shaneyfelt, MR ;

Schwank, JR ;

Dodd, PE ;

Felix, JA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3263-3269

[10] Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics [J].

Massengill, LW ;

Choi, BK ;

Fleetwood, DM ;

Schrimpf, RD ;

Galloway, KF ;

Shaneyfelt, MR ;

Meisenheimer, TL ;

Dodd, PE ;

Schwank, JR ;

Lee, YM ;

Johnson, RS ;

Lucovsky, G .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :1904-1912

← 1 2 3 →