Flexible Nanoporous WO3-x Nonvolatile Memory Device

被引：117

作者：

Ji, Yongsung ^{[1
]}

Yang, Yang ^{[4
,5
]}

Lee, Seoung-Ki ^{[1
]}

Ruan, Gedeng ^{[1
]}

Kim, Tae-Wook ^{[6
]}

Fei, Huilong ^{[1
]}

Lee, Seung-Hoon ^{[7
]}

Kim, Dong-Yu ^{[7
]}

Yoon, Jongwon ^{[1
]}

Tour, James M. ^{[1
,2
,3
]}

机构：

[1] Rice Univ, Dept Chem, 6100 Main St, Houston, TX 77005 USA

[2] Rice Univ, NanoCarbon Ctr, 6100 Main St, Houston, TX 77005 USA

[3] Rice Univ, Dept Mat Sci & NanoEngn, 6100 Main St, Houston, TX 77005 USA

[4] Univ Cent Florida, Nanosci Technol Ctr, 12424 Res Pkwy, Orlando, FL 32826 USA

[5] Univ Cent Florida, Dept Mat Sci & Engn, 12424 Res Pkwy, Orlando, FL 32826 USA

[6] Korea Inst Sci & Technol, Inst Adv Composite Mat, Soft Innovat Mat Res Ctr, Joellabuk Do 565905, South Korea

[7] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 500712, South Korea

来源：

ACS NANO | 2016年 / 10卷 / 08期

关键词：

resistive random access memory; flexible memory; WO3-x memory; nanoporous; RESISTANCE SWITCHING CHARACTERISTICS; MEMRISTIVE DEVICES; THIN-FILM; NANOSHEETS; EVOLUTION; RERAM;

D O I：

10.1021/acsnano.6b02711

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high I-ON/IOFF ratio of similar to 10(5). The device also showed stable retention time over 5 X 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when maximum bending conditions.

引用

页码：7598 / 7603

页数：6

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