Study on the Mechanism and Modeling for Super-filling of High-Aspect-Ratio Features with Copper by Catalyst Enhanced Chemical Vapor Deposition Coupled with Plasma Treatment

被引：1

作者：

Kim, Chang-Gyu ^{[1
]}

Lee, Do-Seon ^{[1
]}

Lee, Won-Jong ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

KOREAN JOURNAL OF METALS AND MATERIALS | 2011年 / 49卷 / 04期

关键词：

electrical/electronic materials; vapor deposition; surface; computer simulation; Cu CECVD; 3-DIMENSIONAL CHIP STACKING; CU; TECHNOLOGY;

D O I：

10.3365/KJMM.2011.49.4.334

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was, determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

引用

页码：334 / 341

页数：8

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